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HSDL - 4261
High-Power T-13/4 (5mm) AlGaAs Infrared (870nm) Lamp
Data Sheet
Description
The HSDL-4261 Infrared emitter was designed for applicationsthatrequirehighpower,lowforwardvoltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs)LEDtechnologyandisoptimizedforspeedand efficiencyatemissionwavelengthsof870nm.Thematerial usedproduceshighradiantefficiencyoverawiderange ofcurrents.TheemitterispackagedinclearT-13/4(5mm) package.
5.00.
Features
* VeryHighPowerAlGaAsLEDTechnology * 870nmWavelength * T-13/4Package * LowCost * LowForwardVoltage:1.4Vat20mA * HighSpeed:15nsRiseTimes
Applications
* IndustrialIREquipments * IRPortableInstruments
8.70. 1.140.
* ConsumerElectronics (Opticalmouseetc) * HighSpeedIRCommunications (IRLANs,IRModems,IRDonglesetc)
5.80.
* IRAudio * IRTelephones
1.6min.
0.7max.
.54
Part Number
Lead Form Straight
Shipping Option Bulk
HSDL-4261
CATHODE FLAT
1.0min.
0.500.1
Absolute Maximum Ratings at 25C Parameter DCForwardCurrent PowerDissipation ReverseVoltage OperatingTemperature StorageTemperature LEDJunctionTemperature LeadSolderingTemperature
Notes: 1. DerateasshowninFigure6.
Symbol IFDC PDISS VR TO TS TJ
Min. 5 -40 -40 -
Max 100 190 70 100 110 260for5sec
Unit mA mW V C C C C
Reference [1],Fig.2
Electrical Characteristics at 25C Parameter ForwardVoltage ForwardVoltageTemperature Coefficient SeriesResistance DiodeCapacitance ReverseVoltage ThermalResistance,Junctionto Ambient Symbol VF DV/DT RS CO VR Rqja Min. 3 Typ. 1.4 1.7 -1.5 -1.3 4.1 80 14 280 Max. 1.5 1.9 Unit V mV/C Ohms pF V C/W Condition IFDC=20mA IFDC=100mA IFDC=20mA IFDC=100mA IFDC=100mA 0V,1MHz IR=100uA Reference Fig.2 Fig.3 Fig.4
Optical Characteristics at 25C Parameter RadiantOpticalPower RadiantOn-AxisIntensity RadiantOn-AxisIntensity TemperatureCoefficient ViewingAngle Peakwavelength PeakwavelengthTemperature Coefficient SpectralWidth OpticalRiseandFallTime Bandwidth Symbol PO IE DIE/DT 2q1/2 lPK Dl/DT Dl tr/tf fc Min. Typ. 9 45 36 180 -0.22 26 870 0.18 47 52 15 23 Max. Unit mW mW/Sr %/C deg nm nm/C nm ns MHz Condition IFDC=20mA IFDC=100mA IFDC=20mA IFDC=100mA IFDC=100mA IFDC=20mA IFDC=20mA IFDC=20mA IFDC=20mA IFDC=100mA Fig.1 Fig.7 Fig.1 Fig.5 Reference
IFPK=500mA DutyFactor=33% PulseWidth=125ns
1. 1 RelativeRadiantIntensity 0.8 0.6 0.4 0. 0 750 PeakWavelengthat IFDC=0mA,TA=5oC
100
Forward Current, IFDC (mA)
TA=5C
10
780
810
840 870 Wavelength(nm)
900
90
1 0.0
0.
0.4
0.6 0.8 1.0 1. Forward Voltage, VF (V)
1.4
1.6
1.8
Figure 1. Relative Radiant Intensity vs. Wavelength
Figure 2. DC Forward Current vs. Forward Voltage
1000
Peak Forward Current, IFPK (mA)
.0
1.8
100
TA=5C
ForwardVoltage,VF(V)
IFDC=100mA
1.6 IFDC=0mA 1.4
10
1.
1 0.0
0.5
1.0
1.5
.0
.5
.0
.5
1.0 -40 -5 0 5 50 70 AmbientTemperature(oC) 85 100
Forward Voltage, VF (V)
Figure 3. Peak Forward Current vs. Forward Voltage
Figure 4. Forward Voltage vs. Ambient Temperature
5.0
100 DC Forward Current, IFDC (mA)
RJA=00C/W
4.0
Relative Radiant Intensity (Normalized at 20mA)
TA=5C .0
80 RJA=400C/W 60 40 0 0 RJA=500C/W
.0
1.0
0.0 0 0 40 60 80 100 DC Forward Current, IFDC (mA)
0
10
0 0 40 50 Ambient Temperature, TA (C)
60
70
Figure 5. Relative Radiant Intensity vs. DC Forward Current
Figure 6. DC Forward Current vs. Ambient Temperature Derated Based on TJMAX=1100C
Figure 7. Radiant Intensity vs. Angular Displacement
For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Pte. All rights reserved. 5989-1534EN - April 11, 2006

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